Growth of Ag on Si(111)-(7x7) Surfaces: Scaling
Study
Solid State Physics (India),
54, (2009) 575-576.
8
Liu, X., Zhang, Y.,
Goswami, D. K., Okasinski, J. S., Salaita, K., Sun, P., Bedzyk, M.
J., and Mirkin, C. A.
Controlled evolution of a polymer single
crystals
Fifth
International Conference on Synchrotron
Radiation, Chicago,SRMS5 Conference, (2006) 266.
7
Bhattacharjee, K., Goswami, D. K and Dev, B. N.
Electronic Structure and Stability of
Atomic-Scale-Height Ag Islands on Si(111)-(7x7)
surfaces: An in-situ Scanning Tunneling
Spectroscopy Study
"5th
International Conference on Atomic Level
Characterizations for New Materials and
Devices", Dec.4-9, 2005, Hawaii, USA,JSPS-141
committee ACTIVITY Report. (2005) 160.
6
Goswami, D. K., Bhattacharjee, K., Jayannavar,
A. M. and Dev, B. N.
Single
Electron Tunneling and the Effect of Quantum
capacitance on Ag Quantum Dot Structures,
"5th
International Conference on Atomic Level
Characterizations for New Materials and
Devices", Dec.4-9, 2005, Hawaii, USA.
JSPS-141 committee ACTIVITY Report. (2005) 174.
5
Goswami, D. K., Bhattacharjee, K., Satpati, B.,
Roy, S., Satyam, P. V. and Dev, B. N
Growth
of self-assembled nanostructures by molecular
beam epitaxy and their characterizations by
scanning tunneling microscopy and spectroscopy.
INAE
Conference on Nanotechnology, Indian National
Academy of Engineering, (2003) 308-316.
4
Goswami, D. K., Bhattacharjee, K. and Dev, B. N.
Electronic structure of the Ag layers on Si(111)
surfaces: A scanning tunneling microscopy study.
Solid State Physics (India),45, (2002) 333-334
3
Satpati, B.,
Goswami,
D. K., Dash, A. K., Satyam, P. V.and Dev, B. N
Self-assembled gold silicide wire growth on
Si(110) surface: A transmission electron
microscopy study.
Solid Physics State (India), 44, (2001) 265-266.
2
Goswami, D. K., Satpati, B., Satyam,P. V.and Dev, B. N.
Growth
of self-assembled Ge nanoislands on Si(100) by
molecular beam epitaxy
Solid State Physics (India),44, (2001) 267-268.
1
Das,
A. K.,Ghose, S. K.,
Goswami,D. K. and
Dev, B. N.
Determination of the surface diffusion
activation energy by X-ray reflectometry.
